| 摘要 |
PURPOSE:To eliminate a process for exposing silicon surface of a bonding surface of a semiconductor chip and reduce semiconductor device manufacturing processes by bonding a semiconductor chip to a sealing substrate with a bonding metal layer and a low melting point glass. CONSTITUTION:A bonding metal layer 5 is provided on the bonding surface of a semiconductor chip 4 through a conductive layer laminted during the forming process and an insulation layer (non-element forming layer) 4c and a semiconductor chip 4 is bonded to a sealing substrate 1 with the bonding metal layer 5 and low melting point glass 3. This bonding metal layer 5 is composed of aluminum, titanium or chromium. Bonding characteristic for low melting point glass 3 is excellent and bonding characteristic with any conductive layer 4C3 of non- element forming layer 4C, insulation layers 4C1, 4C4, 4C6 is also excellent. Therefore, the bonding metal layer 5 can directly be provided to the non-element forming layer 4C without eliminating such layers and thereby the process for exposing semiconductor substrate 4A can be eliminated. |
