| 摘要 |
PURPOSE:To prevent an irregularity from happening on an etching surface while improving the sectional shape of etching pattern by a method wherein, within the inner surface of a device coming into contact with discharge plasma, at least those surface exposed to violent ion shock is coated with silicon nitride. CONSTITUTION:Within a parallel flat type reacting sputter etching device, a target coating member 2 comprising silicon nitride and a ceramics opposite 6 sheet comprising silicon nitride are arranged on a target electrode 1 in a vacuum chamber 7. Then e.g. etching specimens 3 with silicon parts are arranged closely on the target coating member 2. Next silicon tetrachloride gas is jetted from an etching gas introducing and jetting tube 4 to adjust the interval of plasma discharge produced by means of impressing high frequency voltage from the power supply 5 thereof. Then after etching Si with specific thickness, the high frequency power supply is stopped to pick up the specimens 3. Through these procedures, an etching surface may avoid any polluted layers such as carbon while preventing an irregularity from happening to be provided with highly smooth and fine pattern. |
