| 摘要 |
PURPOSE:To prevent reduction of film and to obtain a positive resist having excellent resolution applicable to UV rays and electron beams and having excellent heat resistance and high sensitivity by incorporating a specified base resin and an acid producing agent. CONSTITUTION:This resist compsn. contains 100 pts.wt. base resin comprising a polymer containing aryl groups and having trityloxy groups as substituents, and 1-20 pts.wt. acid producing agent which produces acid by light. In the process of forming a resist pattern, this resist compsn. is applied on a body to be treated to form a resist film and the resist film is exposed to specified light to form a latent image corresponding to the pattern, heated, and then developed with a developer comprising an org. solvent to form the desired resist pattern on the body. |
