A METHOD OF MANUFACTURING AN OXIDE SINGLE CRYSTAL

摘要

An oxide single crystal is manufactured by a process in which a starting material for the growth of a crystal is melted by heat into a predetermined grown crystal through direct heating, wherein a gaseous mixture of an oxygen gas and an inert gas is used as the atmospheric gas during growing, and the concentration of the oxygen gas in the gaseous mixture is set to lower than 50% as expressed by the oxygen partial pressure. The invention also contemplates a method in which a starting material for the growth of crystal is melted by heat into a predetermined grown crystal through direct heating in an oxygen containing atmosphere and then the thus grown crystal is cooled, wherein the temperature for the crystal during growing is maintained above 1000 DEG C, and the grown crystal is cooled before or immediately after the completion of growing after replacing or while replacing the atmosphere at least partially with an inert gas.