| 摘要 |
PURPOSE:To form a resistor accurately in a small area on a compound semiconductor substrate by combining n type and p type resistance layers in the same integrated circuit. CONSTITUTION:Si<+>, Mg<+> ions are implanted to semi-insulating GaAs substrate 11, and activated by lamp annealing to form a p type layer 12 and an n type layer 13. The Mg<+>, Si<+> are further implanted in high density to form a p<+> type layer 14 and an n<+> type layer 15. AuZn/Au electrodes 16, 17 are formed by depositing. An SiO2 film 18 is formed on the overall surface, and TiAu writings 19a, 19b are formed. A p type resistor and an n type resistor are contained in the same integrated circuit, and the desired resistance value can be obtained by the p type layer (large resistance) and the n type layer (smell resistance). |
