| 摘要 |
PURPOSE:To enable energy-beam such as laser beam not contained wet-process to utilize by a method wherein energy-beam is irradiated from the other main face side of a substrate toward an adjacent space section to be divided to a semi-conductor which is adhered spreading over plural regions in a main face of a transparency substrate. CONSTITUTION:A laser beam, which is irradiated from the other main face side of a substrate 10 where is located to the opposite side, arrives at an amorphous semiconductor film 12 which is adhered, at first, to an interface with a transparent electrode film 11a, 11b, 11c... transmitting the substrate 10 and the transparent electrode film 11a, 11b, 11c..., and the film of an adjacent space section 12' to be removed is tried to be removed from the adhered interface. At this time, an amorphous semiconductor film 12 molten by irradiating of laser-beams is located closely to the adjacent space section 12' surrounded by the transparent electrode film and the amorphous semiconductor 12 which has not been molten yet. Accordingly, melting state of the amorphous semicondutor film which has molten from the interface advances forward an exposed face (the surface) expanding, and the dissolve overthrows the film at the time when thickness of the film is very thin, then the said dissolve is almost scattered and lost. |
