| 摘要 |
In a semiconductor device with improved lifetime of a capacitor insulating film, a standing wall portion forming a capacitor lower electrode has a substantially round tip end and a side surface, of which roughness is not more than 200 ANGSTROM . This suppresses concentration of electric field at the tip end of the standing wall portion, and also suppresses irregularity in electric field at its side surface. Thereby, the lifetime of the capacitor insulating film is improved.
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