| 摘要 |
PURPOSE:To increase the gains of an I<2>L element while reducing power consumption by augmenting the concentration of an n layer corresponding to a base section in a lateral P-N-P transistor and elevating the concentration of an injector. CONSTITUTION:N layers 100 for reducing an unnecessary current component flowing out to an injector under the state of grounding from a base 63 and an unnecessary current component flowing out to the outside through a section under a collar 74 for an I<2>L are formed to an injector section (between 64 and 63) and near the section under the collar 74. Consequently, effective current gains are elevated. In the constitution, since there is no layer 100 just under collectors 73, the base width (spaces among the collectors 73 and an N<-> epitaxial layer 3) does not vary even when impurity concentration in the layers 100 scatters, thus obtaining uniform characteristics. The injector 64 for the I<2>L is formed in a p<+> layer, thus preventing the increase of power consumption. |
