| 摘要 |
PURPOSE:To enable to obtain a large sensor output and to make the titled photosensor into an amorphous silicon unmagnifying photosensor with a good S/N by a method wherein the film thickness of the transparent protective layer is set at a specific value in relation with the wavelength of the monochromatic light source. CONSTITUTION:An a-Si films 2, a pair of electrodes 3 and 4 distant at an interval and a protective layer 5, which is substantially transparent for a light source, are laminatedly formed on an insulative substrate 1 in the abovementioned order. In such an amorphous silicon unmagnifying photosensor for image information readout using a monochromatic light source, when the wavelength of the monochromatic light source is set as (lambda), the film thickness of the protective layer 5 as (d) the refractive index of the protective layer 5 as n(lambda) and N as a whole number, the film thickness (d) is set so that the relation between Formulas n(lambda).dapprox.=(N+1/2)lambda/2 is satisfied. Whereby a photo current is augmented and a large sensor output can be obtained. Accordingly, the amorphous silicon unmagnifying photosensor with a good S/N can be obtained. |
