| 摘要 |
PURPOSE:To form a pattern on a semiconductor substrate easily with high accuracy without the use of a photo mask and a photo resist by a method wherein the etching film on the semiconductor substrate is irradiated with an electron ray according to the scheduled pattern in an atmosphere of a carbon series gas. CONSTITUTION:An Si3N4 film 6 is deposited on the semiconductor substrate 1 having a thermal SiO2 film by pressure reduction CVD. This substrate 1 with the Si3N4 film 6 is carried and placed in an electron ray irradiation equipment, and then irradiated with an electron ray 9 by means of an electron gun after introduction of methane gas CH48 threin. This electron ray 9 is controlled by the output of a computer: at the time of image drawing of a necessary pattern on the substrate 1, the carbon in the methane gas 8 forms a carbon series film 7 excellent in etching resistance on the surface of the Si3N4 film 6 only in the part of pattern image-drawing by the action of said electron ray. The Si3N4 film 6 in the part of no deposition of the carbon series film 7 thereon is removed by chemical dry etching, using the film 7 thus formed as an etching mask, resulting in the formation of an Si3N4 film pattern. |
