METHOD TO ALLOW REPEATING APPLICATION OF SILICON CRUCIBLE AT PRODUCTION OF SILOCON MONOCRYSTAL BY CZOCHRALSKI METHOD,申请号CS19830001903-传众专利搜索

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发明名称	METHOD TO ALLOW REPEATING APPLICATION OF SILICON CRUCIBLE AT PRODUCTION OF SILOCON MONOCRYSTAL BY CZOCHRALSKI METHOD
摘要
申请公布号	CS239522(B1)	申请公布日期	1986.01.16
申请号	CS19830001903	申请日期	1983.03.21
申请人	KADANKA,JIRI,CS;RIHA,JIRI,CS	发明人	KADANKA,JIRI,CS;RIHA,JIRI,CS
分类号	C30B15/10;(IPC1-7):C30B15/10	主分类号	C30B15/10
代理机构		代理人
主权项
地址

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