| 摘要 |
PURPOSE:To replace melted solution smoothly while improving residual solution on a crystal substrate by means of bringing the substrate into contact with a material compatible with the solution after growing a crystal by melting process. CONSTITUTION:After growing a film with specific thickness by means of bringing a p type GaAs substrate 1 into contact with the first melted solution 21, a growing vessel lower hole 14 and a waste solution dropping hole 15 are fitted to each other to drop the melted solution 21 into a waste solution vessel 13 by means of relatively sliding a substrate supporter 11, melted solution vessels 12 and the waste solution vessel 13. At this time, a bit of melted solution 21 remains due to surface tension between the substrate 1 and the solution 21. Therefore the supporter 11 is further shifted rightward to fit the hole 15 to a recession 16 in an upper plate 17 of waste solution vessel 17. The recession 16 is filled with quartz wool to completely remove any residual melted solution 21 making use of capillarity. When the substrate 1 is successively brought into contact with the second and later growing melted solution 22, 23 for multilayer growing process, AlxGa1-xAs may be produced with high efficiency, output and reliability since any residual growing melted solution may be prevented from mixing with the next layer improving AlAs mixed crystal ratio and reproducibility of impurity concentration. Besides, any metals with melting point lower than the crystal growing temperature may be substituted for the quartz wool. |
