| 摘要 |
PURPOSE:To enlarge a spectral sensitivity region by constituting photoconductor layers by amorphous semiconductor layers consisting of three layers having different band gaps. CONSTITUTION:Photoconductor layers having three layer structure in which an amorphous hydrogenated SiGe layer 4, an amorphous hydrogenated Si layer 5 and an amorphous hydrogenated Si carbide layer 6 are superposed in succession from the Cr electrode 2 side are held by Cr electrodes 2 as metallic electrodes divided and formed on a glass substrate 1 and an InSn oxide electrode 3 as a light-transmitting electrode. In a photoelectric conversion element shaped in this manner, the photoconductor layers are formed in three layer structure by materials, band gaps thereof are lengthened, in order from the electrode 2 side. Accordingly, when beams are projected, short-wavelength beams of approximately 400nm are absorbed effectively to the layer 6 first, beams having wavelengths of approximately 600nm are absorbed effectively to the layer 5 in the same manner, beams having wavelengths longer than 600nm are absorbed to the layer 4, and all are converted efficiently in a photoelectric manner, and extracted as photocurrents. |
