| 摘要 |
PURPOSE:To solve the point of trouble, such as the increase of series resistance, the increase of contact resistance, the increase of leakage currents, etc. easy to troubling a thin-film element, and to form a thin-film transistor having extremely high performance by dividing a collector and an emitter into two layers and introducing an impurity to a layer being in contact with an electrode in high concentration. CONSTITUTION:A collector 3 and an emitter 5 are each divided into two layers, and sections 3a, 5a being in contact with electrodes 2, 6 are shaped. With the sections 3a and 5a, an impurity is each distributed in concentration higher than the sections 3 and 5, and resistance is lowered while they are brought into contact electrically with the electrodes 2, 6 excellently. Accordingly, current-voltage characteristics can be improved. |
