| 摘要 |
PURPOSE:To eliminate the dispersion of an OFF-state resistance and to prevent the manufacturing yield from lowering by a method wherein an ohmic layer consisting of hydrogenerated amorphous silicon carbon comprising an element or elements of at least one kind or more of arsenic and phosphorus as its impurity is provided. CONSTITUTION:A chrome electrode 2 as a gate metal film is vacuum-evaporated on a glass substrate 1. A silicon nitride layer 3 is formed by decomposing mixed gas of silane and ammonia according to glow discharge, an amorphous silicon layer 4 is formed by decomposing silane gas according to glow discharge and an n type a-SixC1-x (x=0.05) layer 6 is formed by decomposing gas, which is obtained by mixing phosphine in silane gas using methane gas as doping gas, according to glow discharge. A source electrode 7 and a drain electrode 7 are formed. The ohmic layer consists of amorphous silicon carbon comprising an impurity or impurities of at least one kind or more of arsenic and phosphorus. As a result, a stable and high OFF-state resistance can be obtained even though an etching is not performed on the ohmic layer between the source and drain electrodes 7. |
