| 摘要 |
PURPOSE:To accelerate the IC speed while reducing wiring capacity by means of forming aerial metallic wirings on a semiconductor substrate. CONSTITUTION:A semiconductor GaAs 1 is coated with SiO2 2 to form metallic wirings 3 made of e.g. Au connecting to a field effect transistor, a diode or an electronic circuit. Firstly, ater covering a part for SiO2 to be left as it is with photoresist 4, SiO2 and SiO2 below the metallic wirings 3 both not covered with the photoresist 4 are removed by means of etching process. Secondly, when the photoresist 4 is removed by e.g. an organic solvent, aerial metallic wirings 3 supported by supporting regions 50, 60 are formed. In such a constitution, the wiring capacity including fringing capacity may be minimized since aerial layers are inserted into grounding surface or between metallic wirings within such aerial metallic wirings. |
