| 摘要 |
PURPOSE:To effect dimension control with high accuracy and obtain a semiconductor element of high reliability, by a method wherein the dimension control of an actual element pattern formed over a plurality of layer-like films is effected by employing a dimension controlling pattern which is formed over the same plurality of layer-like films. CONSTITUTION:A second-layer film pattern 5a is formed on a first-layer film 4 which forms a dimension controlling pattern, and a dimension controlling pattern 6a is formed over the first-layer film 4 and the second-layer film pattern 5a. The illustrated line widths (f), (g), (h) and (i) are measured. Since the dimension controlling pattern 6a is formed over both the first-layer film 4 and the second- layer film pattern 5a, the pattern 6a more closely corresponds to an actual element pattern 3, so that it is possible to effect accurate dimension control. |
