| 摘要 |
PURPOSE:To provide a target which forms a film having a uniform compsn. and improves the life thereof by forming a target surface in a position where erosion is likely to arise into a projecting shape so as to decrease the change in the surface area occuring in the erosion. CONSTITUTION:A cathode electrode 12 and a wafer holder 11 are disposed to face each other in a chamber 10 of a sputtering film device and a high voltage is impressed between the electrode 12 and an anode electrode 31 from a DC power source 32 to generate plasma P1 and to sputter a target 20 imposed on the electrode 12, by which a sputtered film is formed on a wafer W on a wafer holder 11. The target 20 is constituted of a central part 21 and an outside ring part 23 consisting of Si, etc. and an inside ring part 22 consisting of Mo, etc. and projections 21a, 23a are formed around the part 22. The uniform sputtering is executed and the film is stably formed while the erosion is prevented by the projections 21a, 23a in the stage of sputtering by moving and controlling the horizontal position of the plasma P1 by a plasma control part 13 provided in the lower part of the above-mentioned electrode 12. |
