发明名称 Surface acoustic wave device.
摘要 <p>A surface acoustic wave device has been developed, such as a surface acoustic wave filter in which a plurality of electroacoustic interdigital electrodes are formed, as thin films made principally of aluminium, on the surface of a Li2B407 single crystal substrate and a surface acoustic wave resonator, in which a plurality of electroacoustic interdigital electrodes and grating reflectors for reflecting the surface acoustic wave are formed, as thin films made principally of aluminium, on the surface of a Li2B407 single crystal substrate. Here, a cut angle, at which the substrate is cut from the Li2B407 single crystal, and the propagation direction of the surface acoustic wave are so set that, when the Eulerian angle representation is (90°±λ, 90°±µ, 90°±θ), X=38 to 52°, µ=0 to 5° and θ=0 to 10°, whereby the TCD of the surface acoustic wave device is below ±5 ppm/°C and the coupling coefficient K2 is about 1.0%, and the propagation speed suffers almost no angular dependence.</p>
申请公布号 EP0166880(A2) 申请公布日期 1986.01.08
申请号 EP19850104553 申请日期 1985.04.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUZUKI, HITOSHI C/O PATENT DIVISION;EBATA, YASUO C/O PATENT DIVISION;MATSUMURA, SADAO C/O PATENT DIVISION;USHIZAWA, JISABURO C/O PATENT DIVISION
分类号 H03H9/02;H03H9/42;(IPC1-7):H03H3/04;H03H9/25 主分类号 H03H9/02
代理机构 代理人
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