Product made by method of entraining dislocations and other crystalline defects

摘要

A substrate, such as a film of thermally grown silicon dioxide on a silicon wafer is coated with a thin film of polycrystalline or amorphous silicon in the thickness range 0.05-10 mu deposited by chemical vapor deposition. An encapsulation layer that is a composite of 2 mu m thickness SiO2, 30 nm of Si3N4 is deposited on the thin film. A pattern of stripes is created on this encapsulation layer made of materials, such as titanium, silicon, silicon dioxide and photoresist. A long and narrow molten zone is created in the film with its long axis oriented perpendicular to the lines and is moved with a movable strip-heater over in a direction parallel to the lines in the recrystallization process to establish dislocation and crystalline defects in the film entrained to follow the pattern of the stripes at locations related to the stripes.