| 摘要 |
PURPOSE:To obtain a high quality compound semiconductor by a method wherein organic metallic pyrolysis vapor-phase growth is performed by means that temperature at a wall in a reaction chamber is selected properly within the scope of 300-600 deg.C and is controlled to keep the temperature. CONSTITUTION:A spiral path 11 of cooling gas is installed surrounding of a reaction chamber 1 and cooling gas is forward through a tube 12 and then is controlled to keep selected temperature at 300-600 deg.C in the wall of the tube. For this purpose, temperature of the wall is detected 15 directly or indirectly and signal thereof is sent a temperature controller 16, then cooling gas flow control valve 14 is opened or closed. In such a situation, the substrate 7 is mounted on a susceptor 4 and, when AsH3+(CH3)3Ga+(CH3)3Al+H2 is forwarded 2 into the chamber and is kept prescribed value of gas pressure evacuating 3 from the reaction chamber 1, undesirable precipitation of As4 on the wall face is not generated caused by rising temperature on the wall of the tube, thus a high quality crystal of GaAlAs is grown. |
