| 摘要 |
PURPOSE:To apply an alpha ray shielding on a memory element by superposing thereon an unsaturated compound containing two or more terminal ethylene groups and being photo-polymerizable, a sensitizer and/or a sensitizing system producing a free radical under an activating light, and a high polymer compound as occasion calls, and by subjecting a device thus prepared to exposure and development. CONSTITUTION:(Substituted) polynuclear quinone, a diketo compound, etc. are applied as a sensitizer solely or in combination to a product of addition reaction of trimethylolpropane or epoxy-novolac resin with an acrylic acid, and further a vinyl high polymer compound, a linear polyurethane compound or the like is mixed therein as a linear high polymer compound, so as to adjust the viscosity of a photosensitive resin composition before its exposure to a light and to give a film-forming property thereto. Moreover an adhesion-improving agent, a heat polymerization preventing agent, etc. are added. The total content of U and Th in the composition employed is preferably 1ppm or less, and particularly 0.2ppm or less. This composition is dissolved or dispersed uniformly in toluene and then is applied to the surface of a memory element and dried by a conventional method. Thereby an excellent alpha ray shielding film is obtained. |
