发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To equalize the thickness of an evaporating metal such as a wiring conductor formed to a bored edge section in a contact hole shaped to an oxide film, and to prevent a disconnection at a stepped section of the evaporating metal by forming the bored edge section in a tapered manner. CONSTITUTION:A resist layer 16 is shaped to an oxide film 14 formed on the surface of a semiconductor substrate 12, and a contact hole 18 is bored selectively to the oxide film 14 through etching treatment while using the resist layer 16 as a mask. The contact hole is etched and treated again under conditions in which the selection ratio of the oxide film 14 and the resist layer 16 is increased. Consequently, a section shown in a broken line 20 is removed through etching treatment, and a tapered surface 22 is shaped at the bored edge section of the contact hole 18 in the oxide film 14. When the tapered surface 22 is formed at the bored edge section of the contact hole 18, an evaporating metal such as a wiring conductor shaped while coating the bored edge section can be formed in uniform thickness.
申请公布号 JPS60261141(A) 申请公布日期 1985.12.24
申请号 JP19840117948 申请日期 1984.06.07
申请人 ROOMU KK 发明人 OOTANI HIROAKI;KANZAWA AKIRA
分类号 H01L21/302;H01L21/3065;H01L21/768 主分类号 H01L21/302
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