发明名称 |
Ferroelectric composite material, method of making same, and memory utilizing same |
摘要 |
A ferroelectric memory includes a plurality of memory cells each containing a ferroelectric thin film including a microscopically composite material having a ferroelectric material component and a fluxor material component, the fluxor material being a different chemical compound than the ferroelectric material. The fluxor is a material having a higher crystallization velocity than the ferroelectric material. The addition of the fluxor permits a ferroelectric thin film to be crystalized at a temperature of between 400° C. and 550° C.
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申请公布号 |
US2002168785(A1) |
申请公布日期 |
2002.11.14 |
申请号 |
US20010852895 |
申请日期 |
2001.05.10 |
申请人 |
SYMETRIX CORPORATION |
发明人 |
PAZ DE ARAUJO CARLOS A.;JOSHI VIKRAM;SOLAYAPPAN NARAYAN;CELINSKA JOLANTA;MCMILLAN LARRY D. |
分类号 |
H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L21/336;H01L21/8246;H01L27/115;H01L29/51;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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