CIRCUITO INTEGRATO MONOLITICO, IN PARTICOLARE DI TIPO MOS O CMOS E PROCESSO PER LA REALIZZAZIONE DITALE CIRCUITO.

摘要

A monolithic integrated circuit of either the MOS or CMOS type comprises an intermediate layer of polycrystalline silicon, a layer of a silicide of a refractory metal overlying said polycrystalline silicon layer, and regions of preset area and preset paths formed in the polycrystalline silicon layer and the silicide layer; the preset area regions and preset paths forming respectively high resistivity resistances and low resistivity interconnection lines for an intermediate connection level.