| 摘要 |
PURPOSE:To provide an element having high pressure resistance, by a method in which a sputter oxide film is formed on the surface of a substrate to have a thickness of 5mum or more and is provided in a part thereof with an aperture, which is filled with a semiconductor grown epitaxially, and the upper face of the epitaxially grown film is polished to be flattened, so that an active region isolated by the sputter oxide film is provided. CONSTITUTION:Boron is implanted in the upper face of a p type Si substrate 1 for forming a channel cut layer 2. Subsequently, a 11mum thick sputter SiO2 film 3a is formed thereon. The sputter SiO2 film 3a is then provided with an aperture 4, through which arsenic is implanted to form an n<+> type burried collector layer 5. After that, Si is caused to epitaxially grow selectively so as to have a thickness of about 12mum. The Si film is then polished to reduce the thickness to 10mum and to flaten the surface. In this manner, an active region isolated by the SiO2 film is obtained. Since the active region thus obtained has a thickness as large as 10mum, an element having a sufficiently high pressure resistance can be obtained. |
