| 摘要 |
PURPOSE:To manufacture a JFET, which operates at high speed and high frequency and is fitted to an integration to a high degree, by forming a reverse conduction type cylindrical region to a p type or an n type operating layer and shaping a gate electrode forming an ohmic contact. CONSTITUTION:An insulating film 7 is formed in a region held by a source electrode 2 and a drain electrode 3 shaping ohmic contacts on the surface of a semiconductor substrate 6, and one or a plurality of bored holes are shaped. A reverse conduction type cylindrical region is formed to a p type or an n type operating layer 14 in the lower section of the bored holes, and a gate electrode 11 shaping an ohmic contact is formed to the upper sections of the region and the bored holes. Currents flowing through the source electrode 2 from the drain electrode 3 are modulated by the expansion and contraction of depletion layers formed on junction surfaces among p type gate regions 15 and the n type operating layer 14 by voltage applied to the gate electrode 11, and amplification action and switching action are realized. Accordingly, mutual conductance increases and the degree of integration can be improved even in the same gate width, and phase differences among gates are difficult to be generated, thus displaying an effect of which the lowering of the gains of extra-high frequency is inhibited. |
