发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To shorten the charge/discharge time shared in a propagation delay time by providing the 1st diode between the collector of the 3rd transistor (Tr) and an output terminal and providing a resistor and the 2nd diode between said collector and a high potential power terminal. CONSTITUTION:When a level at an input terminal 2 changes from a low level to a high level and a PNPTr3 is turned off, Trs 5-7 are turned on, an electric charge stored so far in a capacitor 18 is discharged, flows from an output terminal 9 as a current, a part of it flows to a Schottky barrier diode SBD25 and becomes a part of a collector current of the Tr5, a base current of the Tr6 is increased, the base current of the Tr7 is increased by nearly 10 times so as to increase the collector current of the Tr7. Thus, the electric charge of the capacitor 18 is discharged quickly and the discharge time shared in the trailing delay time is shortened.
申请公布号 JPS60257619(A) 申请公布日期 1985.12.19
申请号 JP19840115895 申请日期 1984.06.04
申请人 MITSUBISHI DENKI KK 发明人 IIO MASAYA
分类号 H03K17/04;H03K17/042;H03K17/60 主分类号 H03K17/04
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