发明名称 SPUTTERING TARGET OF HIGH MELTING POINT METAL, AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target which has a low impurity content, has a fine crystal structure, reduces formation of particles in sputtering and has a high density; and a manufacturing method therefor. SOLUTION: This manufacturing method comprises melting a high melting point metal ingot of a raw material with a vacuum electron-beam melting method to form a metal sheet; forming a linearly melted portion by focusing the electron beam onto the formed metal sheet and irradiating it with the beam, to linearly melt the surface of the metal sheet so that the each melt line can be approximately parallel to others at almost regular intervals; and further forming a grid-like melted portion on the surface of the metal sheet, by focusing the electron beam onto the formed metal sheet and irradiating it with the beam, to form a linear melt portion so that each melt line can intersect the already formed melt portion and be approximately parallel to others at almost regular intervals. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004359981(A) 申请公布日期 2004.12.24
申请号 JP20030157552 申请日期 2003.06.03
申请人 SUMITOMO METAL MINING CO LTD 发明人 ITO MASAHIRO
分类号 C23C14/34;H01L21/285;(IPC1-7):C23C14/34 主分类号 C23C14/34
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