SEMICONDUCTOR DEVICE AND PRODUCTION THEREOF

摘要

PURPOSE:To provide a circuit element which is made finer and still has satisfactory characteristics for achieving high integration, by forming a groove in a semiconductor substrate such that the ratio of the width to the depth of that groove is 1:4 or more, and by filling the groove with an insulating material or conductive material for providing the circuit element. CONSTITUTION:A 1.4mum thick SiO2 film 11 is formed on the surface of a substrate 100 by CVD or the like, and a photoresist film 12 is deposited thereon. After the photoresist film 12 is provided with an aperture having a width A of about 1mum, the substrate 10 is placed on a lower electrode 3. The SiO2 film 11 is etched into a width of 1mum with the use of the photoresist film 12 as a mask. The photoresist film 12 is then removed from the substrate 10, and the substrate 10 is then etched by RIE using BR2 as reactive gas with the use of the SiO2 film 11 as a mask. A groove 13 is formed by etching the substrate 10 for a predetermined period of time. The groove 13 had a width of 1mum and a depth D of about 8mum.