| 摘要 |
PURPOSE:To enable a glass substrate, which is inexpensive, to be employed as an insulating substrate, by forming a semicondutor film on an insulating substrate, forming a conductor film on the semiconductor film, and subjecting the substrate to high-frequency induction heating. CONSTITUTION:A semiconductor film 2 is formed on an insulting substrate 1. A conductor film 2 if formed on the film 2. The substrate 1 having the films 2 and 3 formed thereon is subjected to high-frequency induction heating. At this time, the film 3 is preferentially heated to a high temperature by the high-frequency induction heating. In consequence, the film 2 contacting the film 3 is heated to a high temperature, so that the film 2 is crystallized to form a polycrystalline semiconductor film 4. On the other hand, the substrate 1 is scarcely heated by the high-frequency induction heating and is held at a relative low temperature. It is possible, according to this manufacturing method, to form the film 4 without heating the substrate 1 to a high temperature, so that a glass substrate, which has a low melting point and is inexpensive, can be employed as the substrate 1. |
