| 摘要 |
PURPOSE:To realize a high-performance device by a method wherein a thin-film semiconductor layer is of multilayer structure wherein very thin semiconductor layers and insulating layers are alternately piled one upon the other. CONSTITUTION:An Si target and SiO2 target are caused to alternately participate in sputtering for the creation, on a substrate 21, of a lamination composed of alternately piled polycrystalline semiconductor layers 22 and insulating layers 23. The lamination is then subjected to heat treatment at 900 deg.C that continues for about 10sec. A crystal grain boundary connecting a source eletrode 26 and drain electrode 27 may be eliminated when the thickness of a single polycrystalline Si layer 22 is made to be not more than 10nm. A process follows wherein a gate insulating film 24, gate electrode 25, and source electrodes 26 and drain electrodes 27 on both sides of the polycrystalline Si layers 27 are formed, and then wirings 28 are connected. With this design eliminating the crystal grain boundary running from a source electrode to a drain electrode, high-performance thin-film transistor may be produced at a high yield rate. |
