发明名称 SUBSTRATE FOR PHOTOVOLTAIC ELEMENT
摘要 PURPOSE:To realize a substrate, for a photovoltaic element, provided with an electrode of high reflectivity by a method wherein a metal film is formed on a high-polymer film, highly adherent to said high-polymer film, and a thin Ag film and SnO2 film are deposited on said metal film. CONSTITUTION:A flexible polyimide film 1 is subjected to heat treatment for degasification and structural relaxation before a stainless steel thin film 2 and then an Ag thin film 3 are deposited by means of the electron beam evaporation method. Further, by sputtering, an SnO2 thin film 4 is deposited. Controlling the diameter of the SnO2 grains is effective because the consequential scattering of light results in the prolongation of an effective optical path. On this flexible substrate 1 provided with a high-reflectivity lower electrode of a three-layer construction, an amorphous Si P-layer 5, I-layer 6, N-layer 7 are deposited on that order, and then an ITO conductive film 8, Al electrode 9 are provided by means of CVD, for the completion of a flexible solar battery cell. Better results are obtained when the P layer 5 is composed of P type microcrystal Si or P type alpha-SiC:H equipped with a low absorption coefficient in the long-wave region.
申请公布号 JPS60257183(A) 申请公布日期 1985.12.18
申请号 JP19840112735 申请日期 1984.05.31
申请人 SHARP KK 发明人 NOMOTO KATSUHIKO
分类号 H01L31/04;H01L31/0224;H01L31/0392;H01L31/052 主分类号 H01L31/04
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