发明名称 Magnetic bubble memory device
摘要 A high density magnetic bubble memory device comprises first magnetic bubble propagation tracks formed through ion implantation and second magnetic bubble propagation tracks formed of a soft magnetic material. Regions exclusive of those destined for realization of the second magnetic bubble propagation tracks are deeply ion-implanted. Gaps between the adjacent soft magnetic material films are also deeply ion-implanted. The second magnetic bubble propagation tracks may be shallowly ion-implanted or not implanted with ions.
申请公布号 US4559617(A) 申请公布日期 1985.12.17
申请号 US19840635169 申请日期 1984.07.27
申请人 HITACHI, LTD. 发明人 SATO, TOSHIHIRO;SUZUKI, RYO;IKEDA, TADASHI;TAKESHITA, MASATOSHI;SUGITA, YUTAKA
分类号 G11C11/14;G11C19/08;H01F41/34;(IPC1-7):G11C19/08 主分类号 G11C11/14
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