发明名称 |
Magnetic bubble memory device |
摘要 |
A high density magnetic bubble memory device comprises first magnetic bubble propagation tracks formed through ion implantation and second magnetic bubble propagation tracks formed of a soft magnetic material. Regions exclusive of those destined for realization of the second magnetic bubble propagation tracks are deeply ion-implanted. Gaps between the adjacent soft magnetic material films are also deeply ion-implanted. The second magnetic bubble propagation tracks may be shallowly ion-implanted or not implanted with ions.
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申请公布号 |
US4559617(A) |
申请公布日期 |
1985.12.17 |
申请号 |
US19840635169 |
申请日期 |
1984.07.27 |
申请人 |
HITACHI, LTD. |
发明人 |
SATO, TOSHIHIRO;SUZUKI, RYO;IKEDA, TADASHI;TAKESHITA, MASATOSHI;SUGITA, YUTAKA |
分类号 |
G11C11/14;G11C19/08;H01F41/34;(IPC1-7):G11C19/08 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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