发明名称 |
Method of producing a semiconductor device |
摘要 |
There is provided a method of producing a semiconductor device comprising a protecting silicone gel layer which covers a semiconductor chip and bonding wires for taking electrodes out of this chip, and a resin layer which has a smaller thermal expansion coefficient than that of this silicone gel layer at least part of which contacts the silicone gel layer. This method comprises the steps of: thermally expanding the silicone gel layer until it reaches the product environmental guarantee temperature which comes before the cure acceleration reaction in the resin layer; and completely curing the resin layer while maintaining the volume of the silicone gel layer at the same time, thereby fixedly adhering it with the other parts.
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申请公布号 |
US4558510(A) |
申请公布日期 |
1985.12.17 |
申请号 |
US19840592596 |
申请日期 |
1984.03.23 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
TANI, KEIZO;OGASAWARA, MASAHIRO |
分类号 |
H01L21/56;H01L23/24;H01L23/28;H05K7/00;(IPC1-7):H05K5/06;H01L23/30 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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