| 摘要 |
PURPOSE:To suppress the crystallization of a light conducting film and make it possible to realize high resolution, by forming a thin film of Al and the like on a compound semiconductor film of a II-VI group such as CdSe, thereafter adopting a process, in which heat treatment is performed. CONSTITUTION:A CdSe film 2 is formed on a substrate 1 of ceramics and the like at first by evaporation to a thickness of about 1mum. On the film 2, an Al thin film 3 is formed to a thickness of about 70Angstrom by evaporation. Thereafter the heat treatment of the device is performed in a nitride atmosphere including, e.g., 20ppm of oxygen, for 1h at 650 deg.C like a conventional method. By adopting the process like this, crystallization of the CdSe film due to the heat treatment, which has been a problem in the conventional method, can be suppressed. A light conducting film, whose crystal grain is 1mum or less, is obtained. Abnormal crowth of crystal, which causes the instability in characteristics, can be suppressed accordingly. In this case, when the thickness of the Al film is too thick, a thick Al2O3 layer and a thick Al layer are formed on the surface and the photoelectric characteristics are impaired. Therefore, it is especially recommended that the thickness of the Al film after evaporation is 30Angstrom -150Angstrom . |
