| 摘要 |
PURPOSE:To remarkably enhance sensitivity by using a combination of of specified polysilsesquioxane and an aromatic bisazido cross-linking agent as the upper layer resist of the two-layer resist film. CONSTITUTION:A negative type resist pattern is formed by using two-layer resist film consisting of upper and loser layers by using radiation rays. The upper layer is composed of a mixture system of polysilsequioxane represented by formula (I) in which (R1-R4 are independent of each other and each is optionally an substd. methyl or vinyl group), and an aromatic bisazido compd., such as 2,6-bis(4'-azidobenzal)acetone or 2,6-(4-azidobenzylidene)(methyl)cyclohexane. Said bisazido comp. is used in an amt. of 1-30wt% of polysilsequioxane, and if it is out of this range, sufficient cross-linking effect, that is, a sensitization function can not be exhibited. Phenol, polyimide, and polystyrene resin, etc., are used for the lower layer. |
