| 摘要 |
PURPOSE:To enhance resistances to heat and plasma by irradiating electron beams to a resist material contg. a homopolymer or the like having alpha-methylstyrene substd. by an alkylsilyl group on the ring as repeating units. CONSTITUTION:The resist material is composed of a homopolymer or copolymer contg. as repeating units, alpha-methylstyreene substd. by the alkylsilyl group as repeating units alone or in combination with other homopolymer or copolymer, and it is dissolved in a solvent, such as dioxane or cellosolve. A positive type resist pattern corresponding to a desired pattern is obtained by coating a substrate, such as a silicon wafer, with the obtained resist soln. in a film thickness of 0.5-1.5mum, baking it, exposing it to electron beams in a desired pattern, and developing it with a developing soln. |
