SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To prevent electrostatic breakdown without affecting normal circuit operation by connecting a diode element in the opposite direction between a base and an emitter in a transistor element. CONSTITUTION:An N-P-N type transistor element 2 used as a transistor such as an input one for a differential amplification circuit is formed. A base and an emitter in the element 2 are each connected to external lead terminals 4 through pads 3. A collector-base short circuit type C-B short circuit diode element 5 as a protective element is shaped in an electrically isolated island region. A second electrode in the diode element 5 is connected to the base in the element 2 while a first electrode in the diode element 5 is connected to the emitter in the element 2. The C-B short circuit diode element 5 as the protective element is connected between the base and the emitter in the element 2 while polarity thereof is reversed. Surge energy is let to escape to each P-N junction in the C-B short circuit diode element to a certain extent, and the element 2 and the element 5 mutually absorb surge voltage.