| 摘要 |
PURPOSE:To inhibit the lowering of effective mutual conductance due to parasitic resistance based on a low-concentration diffusion layer on the source side by constituting a source region by a high-concentration diffusion layer having diffusion depth deeper than diffusion layers in low concentration and high concentration constituting a drain region. CONSTITUTION:An N<-> type diffusion layer 26 is formed, a resist pattern 27 is shaped, and an N<+> type diffusion layer (a source region) 28 is formed by implanting arsenic ions under the conditions of the quantity of the dose of approximately 5X10<15>cm<-2>. The diffusion depth of the diffusion layer 28 is made deeper than that of the N<-> type diffusion layer 26. A CVD oxide film 29' is left on the side wall of a gate electrode 25 through etching, and arsenic ions are implanted under the conditions of the quantity of the dose of approximately 3X 10<15>cm<-2> while using the oxide film 29' as a mask, thus shaping an N<+> type diffusion layer 30. Accordingly, a drain region 31 consisting of an N<-> type diffusion layer 26 in the vicinity of a gate edge and an N<+> type diffusion layer 30 positioned separated from the gate edge is formed to the surface of a substrate 21 on one side of the gate electrode 25. The diffusion depth of the N<+> type diffusion layer 30 is made shallower than that of the N<-> type diffusion layer 26 according to the conditions of ion implantation. |
