SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device is provided to reduce an area of a memory cell array by arranging plate potential supply lines under a hydrogen barrier film. A plurality of memory cells are arranged in a matrix pattern on a substrate. Each of the memory cells has a capacitor. A plurality of bit lines(BL) are commonly connected to the memory cells which are arranged in the same row. A plurality of word lines(WL) and a plurality of plate lines(CP) are commonly connected to the memory cells which are arranged in the same column. A plurality of plate potential supply lines(CPS) are arranged in a column direction. An electrical unit connects electrically each of the plate potential supply lines to each of the corresponding plate lines. The plate potential supply lines are formed with a material having resistance lower than resistance of each plate line. Each of the capacitors is covered with a hydrogen barrier film(HB) at a periphery thereof. The plate potential supply lines are disposed under the hydrogen barrier film. The plate potential supply lines are electrically connected to the same plate line at positions of the same plate line within a hydrogen barrier film region on a planar view.