| 摘要 |
PURPOSE:To obtain a semiconductor laser device, which oscillates at a single mode and operates at a low threshold, by forming multilayer thin-films containing double hetero-structure onto a substrate with a projecting section and shaping a region having a conduction type reverse to the uppermost layer of the multilayer thin-films to one part of the uppermost layer. CONSTITUTION:A forward mesa-shaped projecting section is formed onto an N type GaAs substrate 10 to a striped shape through photolithography. An N type Ga1-xAlxAs clad layer 11, a Ga1-yAlyAs active layer 12, a P type Ga1-x AlxAs clad layer 13 and an N type GaAs current limiting layer 14 are formed through a liquid-phase epitaxial method so that the film thickness of each layer is made thinner than other sections at the center of the projecting section. Zn is diffused to the surface of the uppermost layer of multilayer thin-films without a mask. Since a crystal growth layer at the center of the projecting section is made thinner than others at that time, a front 15 in a Zn diffusion region can be intruded only to the upper section of the projecting section of the P type Ga1-xAlxAs clad layer 13 by properly selecting the conditions of Zn diffusion. Accordingly, all of the Zn diffusion region display a P type. |
