Power semiconductor circuit

摘要

The invention relates to a power semiconductor circuit in monolithically integrated construction, in which several power semiconductor function units (T1 to T8) are electrically insulated from one another by axially continuous areas of opposite doping (9) in a semiconductor chip (1, 1.1). The necessary electrical connections for implementing a particular circuit are produced by metallisations (6.1 to 6.4) on the surface of the semiconductor chip (1, 1.1) or by conductor tracks (12) on a substrate (13), the conductor tracks (12) of the substrate (13) being brought into contact with the electrodes (3, 4, 5) of the semiconductor function unit (T1 to T8). This makes it possible to produce power semiconductor modules in very compact construction.