| 摘要 |
PURPOSE:To reduce the temperature dependency of an oscillating threshold value by forming the ultrafine region of the size that a quantum well effect is presented by partly etching a semiconductor layer, burying it therein, and forming an active region having a 3-dimensional quantum well structure. CONSTITUTION:An N type InP is grown as an N type clad layer 12 on an N type InP single crystal substrate 13, and further InXGa1-XAsYP1-Y of narrow energy gap from the InP is epitaxially grown as an active region 11. Then, only round regions 21 aligned are masked, and the region 22 except the region 21 is amplified. A P type InP layer is epitaxially grown as a P type clad layer 34 on the ultrafine projection formed in this manner, and thus the region 31 exhibits the quantum effect. Further, the region 31 is used as a buried striped structure of current implanting region. The 3-dimensional quantum well laser manufactures according to this method exhibits remarkably quantum well effect and accordingly remarkably reduces the temperature dependency of the oscillating threshold current. |
