发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the reliability making fine pattern formation easier by a method wherein a conductive metal is deposited on contact holes made in an insulating layer on a substrate utilizing an electromechanical process to form a conductive metallic layer with almost flat surface later forming a metallic film for wiring on the insulating layer. CONSTITUTION:An insulating layer 2 is formed on a substrate 1 to be filled with a wiring 3 forming contact holes 2a, 2b by photolithography. The substrate 1 is immersed in electrolyte 15 in electrolytic cell 14. A conductive metallic material is resolved in the electrolyte 15. An anode 16 made of the conductive metallic material is immersed in the electrolyte 15 and the first cathode 17 is connected to the substrate 1 while the second cathode 18 is connected to a connecting part from a wiring 3. Firstly the anode 16 and the cathode 17 are supplied with DC and a wiring metal is deposited in the contact hole 2a up to the surface of insulating layer 2 making the surface flat. Secondly the anode 16 and the cathode 18 are supplied with DC and the wiring metal is deposited in the contact hole 2b up to the surface of insulating layer 2 making the surface flat. Through these procedures, overall surface may be almost flattened.
申请公布号 JPS60246630(A) 申请公布日期 1985.12.06
申请号 JP19840103897 申请日期 1984.05.21
申请人 MITSUBISHI DENKI KK 发明人 KAWAI AKIRA;NISHIOKA KIYUUSAKU;ITAKURA HIDEAKI;UOTANI SHIGEO
分类号 H01L21/3205;H01L21/288 主分类号 H01L21/3205
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