HIGH FREQUENCY CIRCUIT DEVICE, ACTIVE CIRCUIT DEVICE AND TRANSMITTING/RECEIVING DEVICE

摘要

An FET (3) is surface-mounted on a front surface (2A) of a dielectric substrate (2). A gate electrode (G) and a drain electrode (D) of the FET (3) are bonded to microstrip lines (5, 6) arranged on the front surface (2A) of the dielectric substrate (2) by using a bump (4). Furthermore, a source electrode (S) of the FET (3) is bonded on a ground electrode (7) arranged on the front surface (2A) of the dielectric substrate (2) by using the bump (4). At this time, the ground electrode (7) is separated into a gate side ground electrode (7A) positioned on the gate side, and a drain side ground electrode (7B) positioned on the drain side, and the ground electrodes (7A, 7B) are connected to a ground layer (10) on a rear surface (2B) by using a via hole (9). Thus, the reactance components of the ground electrode (7) can be separated to the gate side and the drain side of the FET (3).