| 摘要 |
<p>A semiconductor device having a bulb-type recess pattern and a method for manufacturing the same are provided to prevent the movement of a void toward a gate dielectric by depositing a poly silicon layer for a gate electrode in two times and applying a void movement preventing layer between the poly silicon layers. A bulb-type recess pattern comprised of a trench pattern(24A) and a ball pattern(24B) is formed on a substrate(21). A gate dielectric(27) is formed on the substrate where the bulb-type recess pattern is formed. A first gate conduction layer is formed on the gate dielectric. A void movement preventive layer(29A) is formed on the first gate conduction layer so that is dose not gap-fill the inside of the bulb-type recess pattern. The void movement preventing layer is selectively etched so that it remains in the bulb-type recess pattern. A second gate conduction layer is formed on the void movement preventing layer and the first gate conduction layer to gap-fill the bulb-type recess pattern.</p> |
