| 摘要 |
PURPOSE:To enable excellent ON-OFF control by deforming the main electrode without contact with adjacent layers, by a method wherein the main surface of a semiconductor substrate at the part except the main electrode and the control electrode is coated with a surface stabilization film, and an insulation film is provided from the control electrode to the surface stabilization film. CONSTITUTION:A P-base layer 32 of the upper main surface is etched down in two steps and thus provided with high impurity concentration regions P<+> 36. Each strip region 31 is provided with an aluminum cathode electrode 37, the lower step of the P-base layer 32 with an aluminum gate electrode 38, and the lower main surface with an anode electrode 39 made mainly of aluminum. The gate electrode 38 is in the form of surrounding each strip region 31. The remnant part of the upper main surface provided with the cathode electrode 37 and the gate electrode 38 is covered with an Si oxide film 40, and PIQ film 41 is provided from the gate electrode 38 to the Si oxide film 40 at the middle step. Therefore, even if the cathode electrode 37 deforms and elongates along the main surface in a lateral direction, it does not come into contact with the P-base layer 32. |
