Insulated type semiconductor devices

摘要

In an insulated type semiconductor device, a metal member is disposed between an insulating member and a circuit element which includes a semiconductor substrate. The metal member is a composite metal member having at least two different kinds of metal layers bonded to each other. In a preferred embodiment, in order to reduce undesirable effects caused by differences in the thermal coefficients alpha I and alpha S of the insulating member and the semiconductor substrate, respectively, the thermal expansion coefficient of said composite metal member as a whole alpha M is adjusted in a range between alpha I and alpha S.