发明名称 ION BEAM DEVICE
摘要 PURPOSE:To subject the sample to micro-processing or analyze a very small area of the sample using a thin flux ion beam discharged from a liquid metal ion source by maintaining the temperature of the sample surface higher than the melting point of an ionic substance. CONSTITUTION:While the temperature of a sample 3 is maintained higher than the melting point of a primary ionic substance by means of a heater 5 or 10, the sample 3 is subjected to processing or analysis by irradiating an ideally placed beam 2 upon the sample 3. Irradiation efficiency and analytic sensitivity can be improved by introducing an active gas as necessary so as to prevent any adhesion of a primary ionic substance to the sample surface, thereby improving the accuracy of the irradiation and the analysis. Heating of the sample 3 and introduction of the inactive gas greatly improves irradiation speed and analytic sensitivity.
申请公布号 JPS60243958(A) 申请公布日期 1985.12.03
申请号 JP19840098724 申请日期 1984.05.18
申请人 HITACHI SEISAKUSHO KK 发明人 TAMURA HIFUMI;YAMAMOTO YOSHIHIKO;SHICHI HIROYASU;ISHITANI TOORU
分类号 H01J37/08;G01Q30/10;G01Q30/12;H01J37/02;H01J37/20;H01J37/252;H01J37/30;H01J49/14 主分类号 H01J37/08
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